История:
DG632-5.0-02P
EMH9FHAT2R
EMH9FHAT2R
Характеристики
Manufacturer
ROHM Semiconductor
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
68
Continuous Collector Current
100 mA
Pd - Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-563-6
Описание
EMH9FHAT2R Биполярный транзистор - EMH9FHAT2R
Скачать datasheet
В наличии
Характеристики
Manufacturer
ROHM Semiconductor
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
68
Continuous Collector Current
100 mA
Pd - Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-563-6
Описание
EMH9FHAT2R Биполярный транзистор - EMH9FHAT2R
Скачать datasheet

