MUN2132T1G
MUN2132T1G
Характеристики
Manufacturer
ON Semiconductor
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
15
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
338 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SC-59
Описание
MUN2132T1G Биполярный транзистор - MUN2132T1G
Скачать datasheet
В наличии
Характеристики
Manufacturer
ON Semiconductor
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
15
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
338 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SC-59
Описание
MUN2132T1G Биполярный транзистор - MUN2132T1G
Скачать datasheet

