История:
S32B-SM-1L.M-M40-MC
DD-064-MC
S32B-TE-2B-PG29
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Каталог
Полупроводниковые приборы
Транзисторы
Bipolar Transistors - Pre-Biased
MUN5133DW1T1G
MUN5133DW1T1G
MUN5133DW1T1G
Характеристики
Manufacturer
ON Semiconductor
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
80
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
- 0.1 A
Peak DC Collector Current
100 mA
Pd - Power Dissipation
250 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SC-88-6
Описание
MUN5133DW1T1G Биполярный транзистор - MUN5133DW1T1G
Скачать datasheet
В наличии
Характеристики
Manufacturer
ON Semiconductor
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
80
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
- 0.1 A
Peak DC Collector Current
100 mA
Pd - Power Dissipation
250 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SC-88-6
Описание
MUN5133DW1T1G Биполярный транзистор - MUN5133DW1T1G
Скачать datasheet

