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Bipolar Transistors - Pre-Biased
MUN5136DW1T1G
MUN5136DW1T1G
MUN5136DW1T1G
Характеристики
Manufacturer
ON Semiconductor
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
80
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
- 100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
250 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SC-88-6
Описание
MUN5136DW1T1G Биполярный транзистор - MUN5136DW1T1G
Скачать datasheet
В наличии
Характеристики
Manufacturer
ON Semiconductor
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
80
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
- 100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
250 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SC-88-6
Описание
MUN5136DW1T1G Биполярный транзистор - MUN5136DW1T1G
Скачать datasheet