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Bipolar Transistors - Pre-Biased
NSBA114TDXV6T5G
NSBA114TDXV6T5G
NSBA114TDXV6T5G
Характеристики
Manufacturer
ON Semiconductor
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
160
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
- 0.1 A
Peak DC Collector Current
100 mA
Pd - Power Dissipation
357 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-563-6
Описание
NSBA114TDXV6T5G Биполярный транзистор - NSBA114TDXV6T5G
Скачать datasheet
В наличии
Характеристики
Manufacturer
ON Semiconductor
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
160
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
- 0.1 A
Peak DC Collector Current
100 mA
Pd - Power Dissipation
357 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-563-6
Описание
NSBA114TDXV6T5G Биполярный транзистор - NSBA114TDXV6T5G
Скачать datasheet