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Полупроводниковые приборы
Транзисторы
Bipolar Transistors - Pre-Biased
RN1101(T5L,F,T)
RN1101(T5L,F,T)
RN1101(T5L,F,T)
Характеристики
Manufacturer
Toshiba
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
30
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Pd - Power Dissipation
100 mW
Package/Case
SOT-416-3
Описание
RN1101(T5L,F,T) Биполярный транзистор - RN1101(T5L,F,T)
Скачать datasheet
В наличии
Характеристики
Manufacturer
Toshiba
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
30
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Pd - Power Dissipation
100 mW
Package/Case
SOT-416-3
Описание
RN1101(T5L,F,T) Биполярный транзистор - RN1101(T5L,F,T)
Скачать datasheet

