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Транзисторы
Bipolar Transistors - Pre-Biased
RN1102MFV,L3F
RN1102MFV,L3F
RN1102MFV,L3F
Характеристики
Manufacturer
Toshiba
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
30
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Pd - Power Dissipation
150 mW
Package/Case
SOT-723
Описание
RN1102MFV,L3F Биполярный транзистор - RN1102MFV,L3F
Скачать datasheet
В наличии
Характеристики
Manufacturer
Toshiba
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
30
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Pd - Power Dissipation
150 mW
Package/Case
SOT-723
Описание
RN1102MFV,L3F Биполярный транзистор - RN1102MFV,L3F
Скачать datasheet