RN1105,LF(CT
RN1105,LF(CT
Характеристики
Manufacturer
Toshiba
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
80
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Pd - Power Dissipation
100 mW
Package/Case
SOT-416-3
Описание
RN1105,LF(CT Биполярный транзистор - RN1105,LF(CT
Скачать datasheet
В наличии
Характеристики
Manufacturer
Toshiba
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
80
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Pd - Power Dissipation
100 mW
Package/Case
SOT-416-3
Описание
RN1105,LF(CT Биполярный транзистор - RN1105,LF(CT
Скачать datasheet