RN1111,LF(CT
RN1111,LF(CT
Характеристики
Manufacturer
Toshiba
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
120
Maximum Operating Frequency
250 MHz
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
100 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SSM-3
Описание
RN1111,LF(CT Биполярный транзистор - RN1111,LF(CT
Скачать datasheet
В наличии
Характеристики
Manufacturer
Toshiba
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
120
Maximum Operating Frequency
250 MHz
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
100 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SSM-3
Описание
RN1111,LF(CT Биполярный транзистор - RN1111,LF(CT
Скачать datasheet

