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Полупроводниковые приборы
Транзисторы
Bipolar Transistors - Pre-Biased
RN1111(TE85L,F)
RN1111(TE85L,F)
RN1111(TE85L,F)
Характеристики
Manufacturer
Toshiba
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
120
Maximum Operating Frequency
250 MHz
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
100 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SSM-3
Описание
RN1111(TE85L,F) Биполярный транзистор - RN1111(TE85L,F)
Скачать datasheet
В наличии
Характеристики
Manufacturer
Toshiba
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
120
Maximum Operating Frequency
250 MHz
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
100 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SSM-3
Описание
RN1111(TE85L,F) Биполярный транзистор - RN1111(TE85L,F)
Скачать datasheet

