RN1115,LF(CT
RN1115,LF(CT
Характеристики
Manufacturer
Toshiba
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
50
Collector- Emitter Voltage VCEO Max
50 V
Pd - Power Dissipation
100 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SC-75-3
Описание
RN1115,LF(CT Биполярный транзистор - RN1115,LF(CT
Скачать datasheet
В наличии
Характеристики
Manufacturer
Toshiba
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
50
Collector- Emitter Voltage VCEO Max
50 V
Pd - Power Dissipation
100 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SC-75-3
Описание
RN1115,LF(CT Биполярный транзистор - RN1115,LF(CT
Скачать datasheet

