История:
1N6134US
1N6125US
RN2113,LF(CT
1N6124US
1N6132US
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Полупроводниковые приборы
Транзисторы
Bipolar Transistors - Pre-Biased
RN1506(TE85L,F)
RN1506(TE85L,F)
RN1506(TE85L,F)
Характеристики
Manufacturer
Toshiba
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
80
Maximum Operating Frequency
250 MHz
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
300 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SMV-5
Описание
RN1506(TE85L,F) Биполярный транзистор - RN1506(TE85L,F)
Скачать datasheet
В наличии
Характеристики
Manufacturer
Toshiba
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
80
Maximum Operating Frequency
250 MHz
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
300 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SMV-5
Описание
RN1506(TE85L,F) Биполярный транзистор - RN1506(TE85L,F)
Скачать datasheet

