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Bipolar Transistors - Pre-Biased
RN1901FETE85LF
RN1901FETE85LF
RN1901FETE85LF
Характеристики
Manufacturer
Toshiba
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
30
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Pd - Power Dissipation
100 mW
Package/Case
SOT-563
Описание
RN1901FETE85LF Биполярный транзистор - RN1901FETE85LF
Скачать datasheet
В наличии
Характеристики
Manufacturer
Toshiba
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
30
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Pd - Power Dissipation
100 mW
Package/Case
SOT-563
Описание
RN1901FETE85LF Биполярный транзистор - RN1901FETE85LF
Скачать datasheet