История:
1N6132AUS
MS32 20008
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Полупроводниковые приборы
Транзисторы
Bipolar Transistors - Pre-Biased
RN1902FE,LF(CT
RN1902FE,LF(CT
RN1902FE,LF(CT
Характеристики
Manufacturer
Toshiba
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
50
Collector- Emitter Voltage VCEO Max
50 V
Pd - Power Dissipation
100 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
ES-6
Описание
RN1902FE,LF(CT Биполярный транзистор - RN1902FE,LF(CT
Скачать datasheet
В наличии
Характеристики
Manufacturer
Toshiba
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
50
Collector- Emitter Voltage VCEO Max
50 V
Pd - Power Dissipation
100 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
ES-6
Описание
RN1902FE,LF(CT Биполярный транзистор - RN1902FE,LF(CT
Скачать datasheet

