RN1911,LF(CT
RN1911,LF(CT
Характеристики
Manufacturer
Toshiba
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
120
Collector- Emitter Voltage VCEO Max
50 V
Pd - Power Dissipation
100 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
US-6
Описание
RN1911,LF(CT Биполярный транзистор - RN1911,LF(CT
Скачать datasheet
В наличии
Характеристики
Manufacturer
Toshiba
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
120
Collector- Emitter Voltage VCEO Max
50 V
Pd - Power Dissipation
100 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
US-6
Описание
RN1911,LF(CT Биполярный транзистор - RN1911,LF(CT
Скачать datasheet