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Полупроводниковые приборы
Транзисторы
Bipolar Transistors - Pre-Biased
RN2114(TE85L,F)
RN2114(TE85L,F)
RN2114(TE85L,F)
Характеристики
Manufacturer
Toshiba
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
50
Collector- Emitter Voltage VCEO Max
- 50 V
Continuous Collector Current
- 100 mA
Peak DC Collector Current
- 100 mA
Pd - Power Dissipation
150 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
VESM-3
Описание
RN2114(TE85L,F) Биполярный транзистор - RN2114(TE85L,F)
Скачать datasheet
В наличии
Характеристики
Manufacturer
Toshiba
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
50
Collector- Emitter Voltage VCEO Max
- 50 V
Continuous Collector Current
- 100 mA
Peak DC Collector Current
- 100 mA
Pd - Power Dissipation
150 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
VESM-3
Описание
RN2114(TE85L,F) Биполярный транзистор - RN2114(TE85L,F)
Скачать datasheet

