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Транзисторы
Bipolar Transistors - Pre-Biased
RN2130MFV,L3F
RN2130MFV,L3F
RN2130MFV,L3F
Характеристики
Manufacturer
Toshiba
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
100
Collector- Emitter Voltage VCEO Max
- 50 V
Continuous Collector Current
- 100 mA
Pd - Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-723-3
Описание
RN2130MFV,L3F Биполярный транзистор - RN2130MFV,L3F
Скачать datasheet
В наличии
Характеристики
Manufacturer
Toshiba
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
100
Collector- Emitter Voltage VCEO Max
- 50 V
Continuous Collector Current
- 100 mA
Pd - Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-723-3
Описание
RN2130MFV,L3F Биполярный транзистор - RN2130MFV,L3F
Скачать datasheet

