RN2427TE85LF
RN2427TE85LF
Характеристики
Manufacturer
Toshiba
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
90
Maximum Operating Frequency
200 MHz
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
- 800 mA
Peak DC Collector Current
800 mA
Pd - Power Dissipation
200 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-346-3
Описание
RN2427TE85LF Биполярный транзистор - RN2427TE85LF
Скачать datasheet
В наличии
Характеристики
Manufacturer
Toshiba
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
90
Maximum Operating Frequency
200 MHz
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
- 800 mA
Peak DC Collector Current
800 mA
Pd - Power Dissipation
200 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-346-3
Описание
RN2427TE85LF Биполярный транзистор - RN2427TE85LF
Скачать datasheet

