История:
1N5635A/TR
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Полупроводниковые приборы
Транзисторы
Bipolar Transistors - Pre-Biased
RN2961(TE85L,F)
RN2961(TE85L,F)
RN2961(TE85L,F)
Характеристики
Manufacturer
Toshiba
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
30
Maximum Operating Frequency
200 MHz
Collector- Emitter Voltage VCEO Max
- 50 V
Continuous Collector Current
- 100 mA
Peak DC Collector Current
- 100 mA
Pd - Power Dissipation
200 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
US-6
Описание
RN2961(TE85L,F) Биполярный транзистор - RN2961(TE85L,F)
Скачать datasheet
В наличии
Характеристики
Manufacturer
Toshiba
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
30
Maximum Operating Frequency
200 MHz
Collector- Emitter Voltage VCEO Max
- 50 V
Continuous Collector Current
- 100 mA
Peak DC Collector Current
- 100 mA
Pd - Power Dissipation
200 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
US-6
Описание
RN2961(TE85L,F) Биполярный транзистор - RN2961(TE85L,F)
Скачать datasheet

