RN4911,LF(CT
RN4911,LF(CT
Характеристики
Manufacturer
Toshiba
Transistor Polarity
NPN, PNP
DC Collector/Base Gain hFE Min
120
Collector- Emitter Voltage VCEO Max
- 50 V, 50 V
Pd - Power Dissipation
100 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
ES-6
Описание
RN4911,LF(CT Биполярный транзистор - RN4911,LF(CT
Скачать datasheet
В наличии
Характеристики
Manufacturer
Toshiba
Transistor Polarity
NPN, PNP
DC Collector/Base Gain hFE Min
120
Collector- Emitter Voltage VCEO Max
- 50 V, 50 V
Pd - Power Dissipation
100 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
ES-6
Описание
RN4911,LF(CT Биполярный транзистор - RN4911,LF(CT
Скачать datasheet

