Главная
Каталог
Полупроводниковые приборы
Транзисторы
Bipolar Transistors - Pre-Biased
SBC817-25LT1G
SBC817-25LT1G
SBC817-25LT1G
Характеристики
Manufacturer
ON Semiconductor
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
160
Maximum Operating Frequency
100 MHz
Collector- Emitter Voltage VCEO Max
45 V
Continuous Collector Current
0.5 A
Pd - Power Dissipation
300 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-23-3
Описание
SBC817-25LT1G Биполярный транзистор - SBC817-25LT1G
Скачать datasheet
В наличии
Характеристики
Manufacturer
ON Semiconductor
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
160
Maximum Operating Frequency
100 MHz
Collector- Emitter Voltage VCEO Max
45 V
Continuous Collector Current
0.5 A
Pd - Power Dissipation
300 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-23-3
Описание
SBC817-25LT1G Биполярный транзистор - SBC817-25LT1G
Скачать datasheet