SBC856BLT3G
SBC856BLT3G
Характеристики
Manufacturer
ON Semiconductor
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
220
Maximum Operating Frequency
100 MHz
Collector- Emitter Voltage VCEO Max
65 V
Continuous Collector Current
0.1 A
Pd - Power Dissipation
300 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-23-3
Описание
SBC856BLT3G Биполярный транзистор - SBC856BLT3G
Скачать datasheet
В наличии
Характеристики
Manufacturer
ON Semiconductor
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
220
Maximum Operating Frequency
100 MHz
Collector- Emitter Voltage VCEO Max
65 V
Continuous Collector Current
0.1 A
Pd - Power Dissipation
300 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-23-3
Описание
SBC856BLT3G Биполярный транзистор - SBC856BLT3G
Скачать datasheet

