SMUN5211T1G
SMUN5211T1G
Характеристики
Manufacturer
ON Semiconductor
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
35
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
0.1 A
Peak DC Collector Current
100 mA
Pd - Power Dissipation
202 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SC-70-3
Описание
SMUN5211T1G Биполярный транзистор - SMUN5211T1G
Скачать datasheet
В наличии
Характеристики
Manufacturer
ON Semiconductor
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
35
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
0.1 A
Peak DC Collector Current
100 mA
Pd - Power Dissipation
202 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SC-70-3
Описание
SMUN5211T1G Биполярный транзистор - SMUN5211T1G
Скачать datasheet