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Транзисторы
Bipolar Transistors - Pre-Biased
SMUN5311DW1T2G
SMUN5311DW1T2G
SMUN5311DW1T2G
Характеристики
Manufacturer
ON Semiconductor
Transistor Polarity
NPN, PNP
DC Collector/Base Gain hFE Min
35
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
0.1 A
Pd - Power Dissipation
250 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-363-6
Описание
SMUN5311DW1T2G Биполярный транзистор - SMUN5311DW1T2G
Скачать datasheet
В наличии
Характеристики
Manufacturer
ON Semiconductor
Transistor Polarity
NPN, PNP
DC Collector/Base Gain hFE Min
35
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
0.1 A
Pd - Power Dissipation
250 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-363-6
Описание
SMUN5311DW1T2G Биполярный транзистор - SMUN5311DW1T2G
Скачать datasheet

