История:
01J3002JR
UMB11NTN
UMB11NTN
Характеристики
Manufacturer
ROHM Semiconductor
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
20
Collector- Emitter Voltage VCEO Max
- 50 V
Continuous Collector Current
- 100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
150 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
UMT-6
Описание
UMB11NTN Биполярный транзистор - UMB11NTN
Скачать datasheet
В наличии
Характеристики
Manufacturer
ROHM Semiconductor
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
20
Collector- Emitter Voltage VCEO Max
- 50 V
Continuous Collector Current
- 100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
150 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
UMT-6
Описание
UMB11NTN Биполярный транзистор - UMB11NTN
Скачать datasheet

