UMB4NTN
UMB4NTN
Характеристики
Manufacturer
ROHM Semiconductor
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
100
Collector- Emitter Voltage VCEO Max
- 50 V
Continuous Collector Current
- 100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Package/Case
UMT-6
Описание
UMB4NTN Биполярный транзистор - UMB4NTN
Скачать datasheet
В наличии
Характеристики
Manufacturer
ROHM Semiconductor
Transistor Polarity
PNP
DC Collector/Base Gain hFE Min
100
Collector- Emitter Voltage VCEO Max
- 50 V
Continuous Collector Current
- 100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Package/Case
UMT-6
Описание
UMB4NTN Биполярный транзистор - UMB4NTN
Скачать datasheet

