История:
G1VL20C-5103
UMC3NT1G
UMC3NT1G
Характеристики
Manufacturer
ON Semiconductor
Transistor Polarity
NPN, PNP
DC Collector/Base Gain hFE Min
35
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
0.1 A
Peak DC Collector Current
100 mA
Pd - Power Dissipation
150 mW
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Package/Case
SC-88A-5
Описание
UMC3NT1G Биполярный транзистор - UMC3NT1G
Скачать datasheet
В наличии
Характеристики
Manufacturer
ON Semiconductor
Transistor Polarity
NPN, PNP
DC Collector/Base Gain hFE Min
35
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
0.1 A
Peak DC Collector Current
100 mA
Pd - Power Dissipation
150 mW
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Package/Case
SC-88A-5
Описание
UMC3NT1G Биполярный транзистор - UMC3NT1G
Скачать datasheet
