UMC4NQ-7
UMC4NQ-7
Характеристики
Manufacturer
Diodes Incorporated
Transistor Polarity
NPN, PNP
DC Collector/Base Gain hFE Min
68, 68
Maximum Operating Frequency
250 MHz, 250 MHz
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Peak DC Collector Current
100 mA, - 100 mA
Pd - Power Dissipation
290 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-353-5
Описание
UMC4NQ-7 Биполярный транзистор - UMC4NQ-7
Скачать datasheet
В наличии
Характеристики
Manufacturer
Diodes Incorporated
Transistor Polarity
NPN, PNP
DC Collector/Base Gain hFE Min
68, 68
Maximum Operating Frequency
250 MHz, 250 MHz
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Peak DC Collector Current
100 mA, - 100 mA
Pd - Power Dissipation
290 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
SOT-353-5
Описание
UMC4NQ-7 Биполярный транзистор - UMC4NQ-7
Скачать datasheet

