История:
E65/32/27-3C92-G500
1.5FMCJ8.2C-W
G1VL20C-5103
UMG11NTR
UMG11NTR
Характеристики
Manufacturer
ROHM Semiconductor
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
80
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Package/Case
TUMT-5
Описание
UMG11NTR Биполярный транзистор - UMG11NTR
Скачать datasheet
В наличии
Характеристики
Manufacturer
ROHM Semiconductor
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
80
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Package/Case
TUMT-5
Описание
UMG11NTR Биполярный транзистор - UMG11NTR
Скачать datasheet

