UMH1NTN
UMH1NTN
Характеристики
Manufacturer
ROHM Semiconductor
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
56
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
150 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
UMT-6
Описание
UMH1NTN Биполярный транзистор - UMH1NTN
Скачать datasheet
В наличии
Характеристики
Manufacturer
ROHM Semiconductor
Transistor Polarity
NPN
DC Collector/Base Gain hFE Min
56
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
150 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Package/Case
UMT-6
Описание
UMH1NTN Биполярный транзистор - UMH1NTN
Скачать datasheet

