APT100GLQ65JU3
APT100GLQ65JU3
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.85 V
Configuration
Single
Gate-Emitter Leakage Current
150 nA
Continuous Collector Current
165 A
Power Dissipation
430 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APT100GLQ65JU3: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.85 V
Configuration
Single
Gate-Emitter Leakage Current
150 nA
Continuous Collector Current
165 A
Power Dissipation
430 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APT100GLQ65JU3: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

