APT100GT120JU2
APT100GT120JU2
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
140 A
Power Dissipation
480 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APT100GT120JU2: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
140 A
Power Dissipation
480 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APT100GT120JU2: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

