APT30GP60JDQ1
APT30GP60JDQ1
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2.2 V
Configuration
Single
Gate-Emitter Leakage Current
100 nA
Continuous Collector Current
67 A
Power Dissipation
245 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APT30GP60JDQ1: Модуль биполярного транзистора с изолированным затвором
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В наличии
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2.2 V
Configuration
Single
Gate-Emitter Leakage Current
100 nA
Continuous Collector Current
67 A
Power Dissipation
245 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APT30GP60JDQ1: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet