История:
ESF-RS100A16YB1
APT40GL120JU2
APT40GL120JU2
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.85 V
Configuration
Single
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
65 A
Power Dissipation
220 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APT40GL120JU2: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.85 V
Configuration
Single
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
65 A
Power Dissipation
220 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APT40GL120JU2: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

