APT50GF120LRG
APT50GF120LRG
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Carbide Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.5 V
Configuration
Single
Gate-Emitter Leakage Current
100 nA
Continuous Collector Current
135 A
Power Dissipation
781 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APT50GF120LRG: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Carbide Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.5 V
Configuration
Single
Gate-Emitter Leakage Current
100 nA
Continuous Collector Current
135 A
Power Dissipation
781 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APT50GF120LRG: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

