История:
ESF-RS200A50BB1-BS
APT50GLQ65JU2
APT50GLQ65JU2
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.85 V
Configuration
Single
Gate-Emitter Leakage Current
150 nA
Continuous Collector Current
80 A
Power Dissipation
220 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APT50GLQ65JU2: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.85 V
Configuration
Single
Gate-Emitter Leakage Current
150 nA
Continuous Collector Current
80 A
Power Dissipation
220 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APT50GLQ65JU2: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

