История:
ESF-RS200A50YB1
APT50GT120JU2
APT50GT120JU2
Характеристики
Manufacturer
Microchip
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
Single
Gate-Emitter Leakage Current
500 nA
Continuous Collector Current
75 A
Power Dissipation
347 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APT50GT120JU2: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
Microchip
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
Single
Gate-Emitter Leakage Current
500 nA
Continuous Collector Current
75 A
Power Dissipation
347 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APT50GT120JU2: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

