История:
BUF08832AIPWPR
MSDF000R
APT50M38JFLL
APT6010JFLL
APTGL120TA120TPG
APTGL120TA120TPG
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
3-Phase
Gate-Emitter Leakage Current
600 nA
Continuous Collector Current
140 A
Power Dissipation
517 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGL120TA120TPG: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
3-Phase
Gate-Emitter Leakage Current
600 nA
Continuous Collector Current
140 A
Power Dissipation
517 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGL120TA120TPG: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

