APTGL180A1202G
APTGL180A1202G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Dual
Gate-Emitter Leakage Current
200 nA
Continuous Collector Current
220 A
Power Dissipation
750 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGL180A1202G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Dual
Gate-Emitter Leakage Current
200 nA
Continuous Collector Current
220 A
Power Dissipation
750 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGL180A1202G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

