APTGL180A120T3AG
APTGL180A120T3AG
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Dual
Gate-Emitter Leakage Current
200 nA
Continuous Collector Current
230 A
Power Dissipation
940 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGL180A120T3AG: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Dual
Gate-Emitter Leakage Current
200 nA
Continuous Collector Current
230 A
Power Dissipation
940 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGL180A120T3AG: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

