APTGL60TL120T3G
APTGL60TL120T3G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
80 A
Power Dissipation
280 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGL60TL120T3G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
80 A
Power Dissipation
280 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGL60TL120T3G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

