APTGL90DDA120T3G
APTGL90DDA120T3G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.85 V
Configuration
Dual
Gate-Emitter Leakage Current
600 nA
Continuous Collector Current
110 A
Power Dissipation
385 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGL90DDA120T3G: Модуль биполярного транзистора с изолированным затвором
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В наличии
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.85 V
Configuration
Dual
Gate-Emitter Leakage Current
600 nA
Continuous Collector Current
110 A
Power Dissipation
385 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGL90DDA120T3G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet