История:
EB2-8-02P-01
LS1027ASN7PQA
PTGL10AR3R9M3P51B0
APTGLQ100A120T3AG
APTGLQ100A120T3AG
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.05 V
Configuration
Dual
Gate-Emitter Leakage Current
150 nA
Continuous Collector Current
185 A
Power Dissipation
650 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGLQ100A120T3AG: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.05 V
Configuration
Dual
Gate-Emitter Leakage Current
150 nA
Continuous Collector Current
185 A
Power Dissipation
650 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGLQ100A120T3AG: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

