APTGLQ100A120TG
APTGLQ100A120TG
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.05 V
Configuration
Dual
Gate-Emitter Leakage Current
150 nA
Continuous Collector Current
170 A
Power Dissipation
520 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGLQ100A120TG: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.05 V
Configuration
Dual
Gate-Emitter Leakage Current
150 nA
Continuous Collector Current
170 A
Power Dissipation
520 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGLQ100A120TG: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

