APTGLQ150H120G
APTGLQ150H120G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.05 V
Configuration
Quad
Gate-Emitter Leakage Current
240 nA
Continuous Collector Current
250 A
Power Dissipation
750 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGLQ150H120G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.05 V
Configuration
Quad
Gate-Emitter Leakage Current
240 nA
Continuous Collector Current
250 A
Power Dissipation
750 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGLQ150H120G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

