APTGLQ200A120T3AG
APTGLQ200A120T3AG
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.05 V
Configuration
Dual
Gate-Emitter Leakage Current
480 nA
Continuous Collector Current
400 A
Power Dissipation
1250 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGLQ200A120T3AG: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.05 V
Configuration
Dual
Gate-Emitter Leakage Current
480 nA
Continuous Collector Current
400 A
Power Dissipation
1250 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGLQ200A120T3AG: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

