APTGLQ300SK120G
APTGLQ300SK120G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.05 V
Configuration
Single
Gate-Emitter Leakage Current
480 nA
Continuous Collector Current
500 A
Power Dissipation
1500 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGLQ300SK120G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.05 V
Configuration
Single
Gate-Emitter Leakage Current
480 nA
Continuous Collector Current
500 A
Power Dissipation
1500 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGLQ300SK120G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet