APTGLQ400A120T6G
APTGLQ400A120T6G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.05 V
Configuration
Dual
Gate-Emitter Leakage Current
680 nA
Continuous Collector Current
625 A
Power Dissipation
1.9 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGLQ400A120T6G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.05 V
Configuration
Dual
Gate-Emitter Leakage Current
680 nA
Continuous Collector Current
625 A
Power Dissipation
1.9 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGLQ400A120T6G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

