APTGT100DH60TG
APTGT100DH60TG
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Dual
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
150 A
Power Dissipation
340 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT100DH60TG: Модуль биполярного транзистора с изолированным затвором
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В наличии
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Dual
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
150 A
Power Dissipation
340 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT100DH60TG: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet