История:
TS393CS RLG
094019
APTGT100DU120TG
APTGT100DU120TG
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
Dual
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
140 A
Power Dissipation
480 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT100DU120TG: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
Dual
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
140 A
Power Dissipation
480 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT100DU120TG: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

